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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3230
DESCRIPTION *With TO-220 package *Complement to type 2SA1276 *Good linearity of hFE APPLICATIONS *General purpose applications *Cordless telephone tx final amplifier application for 1.7MHz system PINNING
PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings (Ta=25)
SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 30 30 5 3 -3 10 150 -55~150 UNIT V V V A A W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IC=10mA ;IB=0 IE=1mA ;IC=0 IC=2A ;IB=0.2 A IC=0.5A ; VCE=2V VCB=20V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=2V IC=2.5A ; VCE=2V IE=0; VCB=10V,f=1MHz IC=0.5A ; VCE=2V 70 25 MIN 30 5
2SC3230
TYP.
MAX
UNIT V V
0.3 0.75
0.8 1.0 1.0 1.0 240
V V A A
35 100
pF MHz
hFE-1 Classifications O 70-140 Y 120-240
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3230
Fig.2 outline dimensions (unindicated tolerance:0.10 mm)
3


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